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Programme Syllabus Overview

This comprehensive syllabus covering the latest industry practices and techniques on VLSI chip design is structured into two modules as a structured path spanning across the 2-month programme. Additionally, 1 week boot camp (hands-on practice) is planned after completion of the 2-month programme at IIT Hyderabad campus. This course curriculum is designed in a way that it aligns with the current industry trends and practices, making graduates job-ready and valuable to organisations. In addition, guiding the learners through the intricacies of the concepts with hands-on implementations on case studies and scenarios as per the industry standards. Each module (Digital/Analog) provides a solid foundation in building proficiency by ensuring a cohesive and thorough understanding from the basic to the advanced topics leveraging extensive hands-on implementations.

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Advanced Certification Programme • 9 Months

Topics Covered

Introduction to Semiconductor Device Physics
Carrier Statics and Dynamics
Semiconductor Junctions
Ideal and Non-Ideal MOS Capacitor
MOSFETs

Learning Outcomes

Understand the fundamental properties of semiconductors and how they differ from insulators and conductors.
Understand the evolution of semiconductors and future research opportunities.
Correlate quantum mechanics with semiconductor devices.
Estimate free carrier density using Density of States and Fermi-Dirac statistics.
Understand charge transport mechanisms in semiconductors.
Solve Poisson's equation, electron and hole continuity equations, and minority carrier diffusion equations.
Draw energy band diagrams of PN junctions and Metal-Semiconductor junctions.
Derive current-voltage characteristics of PN junctions and metal-semiconductor junctions.
Understand non-ideal PN junction diode operation and similar devices.

Topics Covered

Overview: Basics of Transistor scaling, VLSI Technology, Moore’s Law, ITRS, CMOS, BiCMOS, BCD and Other technologies, etc.
Cleanroom Basics
Semiconductor Process such as Oxidation, Diffusion, thin film deposition, Ion Implantation, Lithography, etching.
Non-CMOS Processes and other process modules
Process Flow: CMOS process flow & LDMOS process flow and process integration challenges
Process – Device co-design
Assignments/Lab: Process TCAD Modules

Learning Outcomes

Identify the challenges associated with reducing the size of semiconductor devices.
Identify the requirements for fabricating semiconductor devices. Students will learn about the requirement of clean rooms, different classes of clean rooms and basic processes related to cleaning of semiconductor wafers.
Understand different processes for growing silicon crystals that are used for semiconductor device fabrications.
Understand different processes related to semiconductor device fabrication, including, different methods of oxidation, diffusion, thin film deposition, ion-implantation, lithography and etching.
Understand the complete process flow for the complementary MOS technology, which is the driving force of very large scale integration (VLSI) technology.
Understand the implications of different process steps on device operation.
The importance of process-device co-design in terms of performance and reliability of the device.

Topics Covered

Digital
Analog
Radio Frequency (RF)

Learning Outcomes

Gain basic understanding of both digital and analog VLSI design.
This includes understanding the basic design approaches to implement a digital or analog operation in VLSI technology.
Understand the impact of device design on performance of the VLSI circuits.

Topics Covered

The Ideal MOS Capacitor
The Non-Ideal MOS Capacitor
The MOS Capacitor as a Diagnostic Device
The Long Channel MOSFET
The Short Channel MOSFET
Double Gate MOSFET and FinFETs

Learning Outcomes

Understand different modes of operation of a metal-oxide-semiconductor (MOS) system.
Draw and understand the energy band diagram MOS system under different bias arrangements.
Extend the understanding of MOS capacitors to realize MOS field effect transistors (MOSFETs).
Derive current voltage relationships of n-channel and p-channel MOSFETs.
Understand the challenges associated with reducing the size of MOSFETS.
Understand the operating principle of bipolar junction transistors, draw their energy band diagram, minority and majority carrier concentrations and the process of carrier transport.
Understand the semiconductor device operation in photo regime, including light emitting diodes as well as photo detectors.
Understand design principle and operation of advanced architectures like fin gated FETs, and nanowire FETs.
Understand the operating principle of next generation device technologies, including, graphene and carbon nanotube based FETs, and 2-D material based transistors. Students will be able to link the material physics to transistor design.

Topics Covered

Carrier transport and carrier energy fundamentals, avalanche multiplication and breakdown, hot carrier induced (HCI) degradation mechanism, NBTI/PBTI, TDDB, GOI and Electromigration.
ESD and latch-up phenomena, Test models and methods, ESD protection devices and device physics, Advance ESD protection devices, high current effects and filaments, Negative differential resistance, Physics of ESD failure.
ESD protection methodology, ESD protection circuits, ESD protection for Analogue/RF and mixed-signal modules, General rules for ESD design, layout considerations for ESD and latch-up protection, understanding parasitic.
ESD circuit simulation basics and requirements, ESD TCAD simulation methodology.
System on Chip overview and system ESD aspects, case studies related to product failures and solutions use
High current injection, High field effects, Negative differential resistance and Current filaments, Drain extended MOS devices and associated week ESD robustness. ESD behaviour of FinFET devices, SiGe-FETs and other quantum well devices, Impact of stress & strain on ESD behaviour, ESD devices in advanced CMOS and BiCMOS technology, Impact of technology scaling on ESD behaviour, Special analogue and RF ESD protection devices and circuits. Impact of ESD stress on CNTs, Graphene and other 2D material-based Nanoelectronic devices. ESD Device modelling for circuit simulations, State-of-the-art on CDM ESD protection, CDM tester models, modelling CDM behaviour and CDM simulations, ESD verification flow and methodology, Towards full chip ESD simulation, Transient latch-up, System-level ESD, System Efficient ESD design (SEED), Case studies.

Learning Outcomes

The participants will able to develop basic understanding related to the Electrostatic Discharge (ESD) phenomenon and able to understand how ESD impacts the reliability of the semiconductor devices. At the end of these module they also know how IC can be damaged with the ESD.
The participants will be able to know what are different kind of ESD that leads to impact the reliability of the semiconductor devices and what are its associated models and these models behaves.
The participants will be able to know different protection concept in device level, circuit level as well as system level. They also will be able to develop the understanding for Layout consideration related to ESD event.
At the end of this module, the participants will be able to answer how the basic semiconductor devices like; resistor, diode, MOSFET and SCR responds to ESD event and why these devices will be useful to design as an ESD protection element.
The participants will also be able to validate their understanding of the device physics of ESD protection elements by performing the TCAD simulations.

Topics Covered

Power device applications
Semiconductor Physics under extreme conditions
Power Diodes
Si High Power MOS devices, design and Technology
GaN Power HEMTs
Power Device Design Lab

Learning Outcomes

The participants will be able to develop the basic understanding related to power semiconductor device, how these devices have been developed with time and its play an important role in the semiconductor industry.
They will be able to know the basic design schemes of the power semiconductor devices like power diode, power MOSFET.
They will also able to know how materials property can impacts the power device performance with the help of GaN HEMT.
The participants will also be able to validate their understanding of the power device physics by performing the TCAD simulations of the basic devices

Topics Covered

Device TCAD and Device Design Basics using TCAD
CMOS Process Technology, Process Development, Integration and Simulation
Semiconductor Device Characterization
Library / PDK Development
Includes hands-on projects at MSDLab during 5-day visit to IISc campus

Learning Outcomes

The participants will be able to know the device simulation using industry standard TCAD tool and relate the theoretical concepts with the help of simulation experiments. They will also be able to answer the importance of the TCAD tool for device designing.
They will be able to perform basic 2D simulation of the basic devices like Resistor, Diode, MOSFET.
At the end of this module, the participants will also be able know the process recipe to fabricate basic device structures. They will be able to know the realization of the semiconductor devices using basic process steps like; depositing oxide screening, implantation and annealing.
With the help of lab, they will be able to analyse the charge transport phenomenon to develop device level understanding and how these charge transports impacts on the electrical characteristics of the devices.
At the end they will be able to do circuit simulation with the semiconductor devices using MIXMODE simulation, where they can relate how NMOS and PMOS can be design in device level to get the optimum characteristics of the inverter.
They will also be able to taste the real scenario of the semiconductor devices. How these devices can be fabricated and characterized in Lab by visiting at MSD’s Lab, IISc.

Executive Certification Programme • 6 Months

Topics Covered

Introduction to Semiconductor Device Physics
Carrier Statics and Dynamics
Semiconductor Junctions
Ideal and Non-Ideal MOS Capacitor
MOSFETs

Learning Outcomes

Understand the fundamental properties of semiconductors and how they differ from insulators and conductors.
Understand the evolution of semiconductors and future research opportunities.
Correlate quantum mechanics with semiconductor devices.
Estimate free carrier density using Density of States and Fermi-Dirac statistics.
Understand charge transport mechanisms in semiconductors.
Solve Poisson's equation, electron and hole continuity equations, and minority carrier diffusion equations.
Draw energy band diagrams of PN junctions and Metal-Semiconductor junctions.
Derive current-voltage characteristics of PN junctions and metal-semiconductor junctions.
Understand non-ideal PN junction diode operation and similar devices.

Topics Covered

Overview: Basics of Transistor scaling, VLSI Technology, Moore’s Law, ITRS, CMOS, BiCMOS, BCD and Other technologies, etc.
Cleanroom Basics
Semiconductor Process such as Oxidation, Diffusion, thin film deposition, Ion Implantation, Lithography, etching.
Non-CMOS Processes and other process modules
Process Flow: CMOS process flow & LDMOS process flow and process integration challenges
Process – Device co-design
Assignments/Lab: Process TCAD Modules

Learning Outcomes

Identify the challenges associated with reducing the size of semiconductor devices.
Identify the requirements for fabricating semiconductor devices. Students will learn about the requirement of clean rooms, different classes of clean rooms and basic processes related to cleaning of semiconductor wafers.
Understand different processes for growing silicon crystals that are used for semiconductor device fabrications.
Understand different processes related to semiconductor device fabrication, including, different methods of oxidation, diffusion, thin film deposition, ion-implantation, lithography and etching.
Understand the complete process flow for the complementary MOS technology, which is the driving force of very large scale integration (VLSI) technology.
Understand the implications of different process steps on device operation.
The importance of process-device co-design in terms of performance and reliability of the device.

Topics Covered

The Ideal MOS Capacitor
The Non-Ideal MOS Capacitor
The MOS Capacitor as a Diagnostic Device
The Long Channel MOSFET
The Short Channel MOSFET
Double Gate MOSFET and FinFETs

Learning Outcomes

Understand different modes of operation of a metal-oxide-semiconductor (MOS) system.
Draw and understand the energy band diagram MOS system under different bias arrangements.
Extend the understanding of MOS capacitors to realize MOS field effect transistors (MOSFETs).
Derive current voltage relationships of n-channel and p-channel MOSFETs.
Understand the challenges associated with reducing the size of MOSFETS.
Understand the operating principle of bipolar junction transistors, draw their energy band diagram, minority and majority carrier concentrations and the process of carrier transport.
Understand the semiconductor device operation in photo regime, including light emitting diodes as well as photo detectors.
Understand design principle and operation of advanced architectures like fin gated FETs, and nanowire FETs.
Understand the operating principle of next generation device technologies, including, graphene and carbon nanotube based FETs, and 2-D material based transistors. Students will be able to link the material physics to transistor design.

Topics Covered

Device TCAD and Device Design Basics using TCAD
CMOS Process Technology, Process Development, Integration and Simulation
Semiconductor Device Characterization
Library / PDK Development
Includes hands-on projects at MSDLab during 5-day visit to IISc campus

Learning Outcomes

The participants will be able to know the device simulation using industry standard TCAD tool and relate the theoretical concepts with the help of simulation experiments. They will also be able to answer the importance of the TCAD tool for device designing.
They will be able to perform basic 2D simulation of the basic devices like Resistor, Diode, MOSFET.
At the end of this module, the participants will also be able know the process recipe to fabricate basic device structures. They will be able to know the realization of the semiconductor devices using basic process steps like; depositing oxide screening, implantation and annealing.
With the help of lab, they will be able to analyse the charge transport phenomenon to develop device level understanding and how these charge transports impacts on the electrical characteristics of the devices.
At the end they will be able to do circuit simulation with the semiconductor devices using MIXMODE simulation, where they can relate how NMOS and PMOS can be design in device level to get the optimum characteristics of the inverter.
They will also be able to taste the real scenario of the semiconductor devices. How these devices can be fabricated and characterized in Lab by visiting at MSD’s Lab, IISc.

Frequently Asked Questions

Microelectronics and Semiconductor Technologies are enabling the creation of next-generation semiconductors, making systems faster, smaller and more energy efficient.

The Semiconductor Industry is expected to reach $598.93 Billion by 2030.
India is emerging as one of the fastest-growing semiconductor markets.
AI, Automation, Automotive Electronics and IoT are rapidly increasing semiconductor demand.
Skilled semiconductor professionals are among the highest-paid engineers worldwide.

The majority of professionals in the VLSI and semiconductor industry are often trained in VLSI design or circuit design principles, and in their design practice, they consider semiconductor devices as a black box. These design practices, which require one to follow thousands of design rules, don’t involve a first principal understanding of semiconductor technology. This gap originates from the undergraduate and postgraduate training given at the majority of places, which lacks rigorous training on micro and nanoelectronics and device as well as semiconductor technology principles. While the black box approach may have worked for several generations, given the way technology is advancing, it is going to be difficult for working professionals to survive in this industry without understanding the fundamentals of devices and semiconductor technologies and the principles of micro and nanoelectronics. The other aspect is the push for semiconductor fabs and production around the world. There will be around fifty new fabs in the next 5 years, possibly even more, and each fab would require thousands of semiconductor professionals. This means there will be demand for over one lakh new professionals in the next five years who understand semiconductor technologies. To enable professionals to navigate this change, The Semiconductor Industry is expected to reach $958.93 billion by 2030 ~ Mordor Intelligence, where aspirants can enhance their knowledge and build capabilities to thrive in the new semiconductor era.

A tech professional in semiconductor/VLSI domain, or across any electronics industry, keen to build expertise in design, development, and integration of micro and nanoelectronics devices and semiconductor technologies. An industry professional or Engineering Manager willing to build a leadership career in the semiconductor industry. An academician who wants to build practical expertise in semiconductor technology and enrich their academic and research portfolio. A fresh graduate willing to build a career in Microelectronics and semiconductor industry.

With the growing complexity of CMOS technology and the increasing importance of heterogeneous integration, a strong grasp of semiconductor technology has become essential for appreciating the intricacies of circuit design and its performance dependencies on technology- and device-specific knowledge. A thorough understanding of semiconductor technology not only enhances efficiency in circuit design for advanced nodes and complex or heterogeneously integrated automotive nodes but also deepens insight into process, technology, and device design principles. This comprehensive knowledge is crucial for navigating complex circuit design rules. In essence, mastering semiconductor technology significantly elevates your capabilities as a circuit designer and opens opportunities to lead at the semiconductor/technology forefront.

For every module there will be an MCQ based test and also at the end you would be working on a project suggested by the professor.

The programme duration is 9 months and includes live online classes, self-paced learning, assignments, projects and hands-on laboratory sessions.

Most learning is delivered online through live interactive sessions. Certain laboratory activities or campus visits may be scheduled depending on the programme structure.

Sessions are delivered by IISc faculty, experienced researchers, industry experts and semiconductor professionals with extensive real-world expertise.

Candidate submit their application forms for the program by sharing details of education, work experience, and a statement of purpose. These applications are reviewed by IISc faculty members corresponding to their respective programs. A selected candidates list issued by the IISc faculty members and the candidates are informed by the TalentSprint team through a selection email. A payment link for paying the program fee is shared along with the selection email. Candidates can enrol into the program by making payment of the program fee.

Join in these easy steps: Minimum Qualification: B.E./B.Tech Degree (ECE, EEE, EE, Instrumentation, Nanoscience/Nanotechnology, Material Science, Material Physics, Material Engineering and Semiconductor) Marks: Minimum of 50% marks and good exposure to physics Experience: Minimum of 2 years

As per the programme norms, participants have to maintain at least 75% of attendance during the programme. Going by the curriculum, it is recommended that participants maintain attendance for enriched learning. In the event of unavoidable circumstances, if any, one can access the recorded lectures on our platform to cover up for the missed sessions.

Yes. Flexible EMI options can be availed to pay the programme fee in installments. Please reach out to your RM to know about the details of the schemes available.

No, the application fee is non-refundable.

The tried and tested direct-to-device platform enables 24 x 7 learning for its users. Some key benefits of the platform are: Intuitive student experience through a user-friendly LMS Seamless faculty experience through state-of-the-art Studios Highly Interactive Online Classes Effective group/peer learning/projects through Breakout Rooms Proctored Online Assessments with detailed analysis Insightful Reports on student engagement and performance Flexible integration with other components, as needed

An internet-connected device, Computer/Laptop/Tablet/Smartphone, is enough to access the platform and Web camera and Mic with necessary power backup will be needed for proctored online assessments.

Lead the Semiconductor Revolution

Advanced Certification Programme in

Microelectronics and

Semiconductor Technology

India's #1

9 Months

180 Hours

5 Days

This is the decade of Semiconductors

Notify Me for Next Cohort

Most sought-after expertise in the VLSI - Semiconductor Industry

Top roles for certified semiconductor technology professionals

IISc Academic Excellence

Programme Syllabus Overview

Topics Covered

Learning Outcomes

Topics Covered

Learning Outcomes

Topics Covered

Learning Outcomes

Topics Covered

Learning Outcomes

Topics Covered

Learning Outcomes

Topics Covered

Learning Outcomes

Topics Covered

Learning Outcomes

Topics Covered

Learning Outcomes

Topics Covered

Learning Outcomes

Topics Covered

Learning Outcomes

Topics Covered

Learning Outcomes

Hi-Tech Hi-Touch Hybrid Learning Platform

Expert Faculty

Prof. Mayank Shrivastava

Research Expertise

Why Professionals Choose This Programme

Fresher from an academic institute of applied science

Senior Engineer with 7+ years of experience

Quality Assurance at a leading semiconductor company

Is this programme ideal for me?

Eligibility

High Impact Learning

9 Months Comprehensive Programme

6 Months Programme

Preview of MSDLab at IISc

What is the return on my investment?

Supercharge your professional growth

Innovate with advanced technologies

Empower your organization

TalentSprint Career Accelerator Program

Professional Development

Excellent Networking with Like-minded Professionals

Level Up Your Career Journey

Programme Fee Structure

Application Fee : ₹2,000

9 Months Comprehensive Programme

6 Months Programme

About TalentSprint, Part of Accenture

15+

300K

95%

80

30+

Most Disruptive Education & EdTech

Most Disruptive Innovation

Leading E-Learning Platform

Innovative EdTech Product

Innovative EdTech Product

Innovative EdTech Product

Innovative EdTech Product

Innovative EdTech Product

Innovative EdTech Product

Innovative EdTech Product

Innovative EdTech Product

Innovative EdTech Product

This is the decade of
Semiconductors

Most sought-after expertise in the
VLSI - Semiconductor Industry

Hi-Tech Hi-Touch
Hybrid Learning Platform

6 Months
Programme